心脏电子装置植入术后新发心房高频事件相关因素的研究进展

王鑫, 张展, 刘铎, 等. 心脏电子装置植入术后新发心房高频事件相关因素的研究进展[J]. 临床心血管病杂志, 2024, 40(4): 281-285. doi: 10.13201/j.issn.1001-1439.2024.04.006
引用本文: 王鑫, 张展, 刘铎, 等. 心脏电子装置植入术后新发心房高频事件相关因素的研究进展[J]. 临床心血管病杂志, 2024, 40(4): 281-285. doi: 10.13201/j.issn.1001-1439.2024.04.006
WANG Xin, ZHANG Zhan, LIU Duo, et al. Related factors of new atrial high frequency events after cardiac electronic device implantation[J]. J Clin Cardiol, 2024, 40(4): 281-285. doi: 10.13201/j.issn.1001-1439.2024.04.006
Citation: WANG Xin, ZHANG Zhan, LIU Duo, et al. Related factors of new atrial high frequency events after cardiac electronic device implantation[J]. J Clin Cardiol, 2024, 40(4): 281-285. doi: 10.13201/j.issn.1001-1439.2024.04.006

心脏电子装置植入术后新发心房高频事件相关因素的研究进展

  • 基金项目:
    甘肃省人民医院院内科研基金青年培育项目(No:23GSSYF-29)
详细信息

Related factors of new atrial high frequency events after cardiac electronic device implantation

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  • 植入心脏植入式电子设备可以检测心房高频事件发生,也可以增加心房高频事件的发病率。心房高频事件与卒中的风险增加相关,但是关于早期识别心房高频事件的危险因素或预测因子的相关研究较少,使得我们不能尽早评估和干预卒中高风险人群,进而减少急性脑卒中事件的发生。本文从心房高频事件的定义、发病率和术后新发心房高频事件的相关因素等方面进行综述,以期为早期识别术后心房高频事件高危患者提供理论支持。
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出版历程
收稿日期:  2023-03-13
刊出日期:  2024-04-13

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